 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0470 Features * Cascadable 50 Gain Block * 3 dB Bandwidth: DC to 4.0 GHz * 12.5 dBm Typical P1 dB at 1.0 GHz * 8.5 dB Typical Gain at 1.0 GHz * Unconditionally Stable (k>1) * Hermetic Gold-ceramic Microstrip Package high reliability package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 70 mil Package Description The MSA-0470 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.25 V 2 5965-9576E 6-334 MSA-0470 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 100 mA 650 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 115C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 8.7 mW/C for TC > 125C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications[1], TA = 25C Symbol GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 50 mA, ZO = 50 Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 2.5 GHz f = 0.1 to 2.5 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 0.1 to 2.5 GHz Units dB dB GHz Min. 7.5 Typ. 8.5 0.6 4.0 1.7:1 2.0:1 Max. 9.5 1.0 dB dBm dBm psec V mV/C 4.75 6.5 12.5 25.5 125 5.25 -8.0 5.75 Note: 1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current is on the following page. 6-335 MSA-0470 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 50 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 .18 .18 .18 .17 .16 .16 .16 .21 .26 .32 .37 .40 .41 .42 179 179 179 -179 -176 -174 -166 -163 -162 -170 -177 175 166 155 8.5 8.5 8.5 8.5 8.4 8.3 8.2 7.8 7.3 6.5 5.7 4.7 3.9 3.1 2.67 2.67 2.67 2.65 2.64 2.61 2.56 2.46 2.33 2.12 1.93 1.73 1.57 1.44 176 172 163 155 147 138 117 97 83 65 38 33 20 7 -16.4 -16.4 -16.4 -16.2 -16.1 -15.9 -15.5 -14.6 -13.8 -13.5 -13.2 -12.6 -12.4 -11.9 .151 .151 .152 .155 .158 .161 .169 .186 .204 .212 .220 .234 .239 .255 1 2 3 5 8 6 9 9 12 10 7 3 -1 -6 .10 .10 .13 .16 .19 .22 .29 .33 .36 .40 .40 .40 .39 .37 -14 -30 -50 -67 -79 -90 -111 -131 -142 -156 -164 -170 -173 -176 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25C (unless otherwise noted) 12 10 60 G p (dB) 8 6 4 20 2 0 0 1 2 3 4 Vd (V) 5 6 7 5 0.1 GHz 1.0 GHz 2.0 GHz 20 30 40 50 I d (mA) 60 70 G p (dB) I d = 70 mA P1 dB (dBm) 15 NF (dB) 12 9 NF (dB) 6 3 0.1 I d = 30 mA 6.0 I d = 30 mA I d = 50 mA I d = 70 mA 0.1 0.2 0.3 0.5 1.0 2.0 I d = 50 mA 6.5 0.2 0.3 0.5 1.0 2.0 4.0 I d (mA) Gain Flat to DC 7 80 TC = +125C TC = +25C TC = -55C 9 8 40 6 0.1 0.3 0.5 1.0 3.0 6.0 4 FREQUENCY (GHz) Figure 1. Typical Power Gain vs. Frequency, TA = 25C, Id = 50 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. 13 P1 dB (dBm) 12 11 10 9 G p (dB) 8 7 6 5 -55 -25 +25 NF GP 8 7 6 +85 5 +125 P1 dB 21 18 7.5 7.0 5.5 FREQUENCY (GHz) TEMPERATURE (C) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=50mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-336 70 mil Package Dimensions .040 1.02 4 GROUND .020 .508 RF INPUT 1 RF OUTPUT AND BIAS 3 2 GROUND .004 .002 .10 .05 .070 1.70 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .495 .030 12.57 .76 .035 .89 6-337 |
Price & Availability of MSA-0470
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |